NPN RF Bipolar Junction Transistor for surface mount applications. Features a 30V collector-emitter voltage, 0.02A collector current, and 150mW power dissipation. Delivers a minimum DC current gain of 60 at 2mA/10V, with a typical transition frequency of 650MHz and a maximum noise figure of 3.2dB. Packaged in a 3-pin S-Mini (SOT-23) lead-frame SMT with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operates across a temperature range of -55°C to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC3122(TE85R) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
30V
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.02A
Maximum Power Dissipation
150mW
Minimum DC Current Gain
60@2mA@10V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
650(Typ)MHz
Maximum Noise Figure
3.2dB
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Typical Power Gain
24dB
Compliance
Cage Code
S0562
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC3122(TE85R) Datasheet
Download the complete datasheet for Toshiba 2SC3122(TE85R) to view detailed technical specifications.
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