NPN RF BJT transistor, single element silicon device for surface mount applications. Features a 20V collector-emitter voltage, 0.05A DC collector current, and 150mW power dissipation. Operates with a minimum DC current gain of 40 at 5mA/10V, and a maximum transition frequency of 1400MHz. Packaged in a 3-pin S-Mini plastic housing with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC3123(T5RALPSS4) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
20V
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.05A
Maximum Power Dissipation
150mW
Minimum DC Current Gain
40@5mA@10V
Minimum DC Current Gain Range
30 to 50
Maximum Transition Frequency
1400(Typ)MHz
Maximum Noise Figure
5.5dB
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
10V/5mA
Compliance
Cage Code
S0562
EU RoHS
No
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba 2SC3123(T5RALPSS4) Datasheet
Download the complete datasheet for Toshiba 2SC3123(T5RALPSS4) to view detailed technical specifications.
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