NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 200V collector-emitter voltage and 0.05A maximum collector current. This single-element transistor is housed in a compact S-MINI plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. It offers a minimum DC current gain of 120 at 10mA and 3V, with a typical transition frequency of 100MHz. Maximum power dissipation is 150mW, and it operates up to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC3138Y(T5LMDNS,F technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
200V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
200V
Maximum DC Collector Current
0.05A
Maximum Power Dissipation
150mW
Material
Si
Minimum DC Current Gain
120@10mA@3V
Maximum Transition Frequency
100(Typ)MHz
Category
Bipolar Small Signal
Max Operating Temperature
125°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC3138Y(T5LMDNS,F Datasheet
Download the complete datasheet for Toshiba 2SC3138Y(T5LMDNS,F to view detailed technical specifications.
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