NPN bipolar junction transistor designed for general-purpose applications. Features a maximum collector-emitter voltage of 800V and a maximum collector current of 3A. This single-element silicon transistor is housed in a TO-220AB through-hole package with a 3-pin configuration and a tab. Maximum power dissipation is 1500mW, with a minimum DC current gain of 10 at 0.8A and 5V. Operating temperature range extends up to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Toshiba 2SC3148(FA-1,Z) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
8.6(Max)
Seated Plane Height (mm)
20.9(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
900V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
800V
Maximum DC Collector Current
3A
Maximum Power Dissipation
1500mW
Material
Si
Minimum DC Current Gain
Category
Bipolar Power
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC3148(FA-1,Z) Datasheet
Download the complete datasheet for Toshiba 2SC3148(FA-1,Z) to view detailed technical specifications.
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