NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features 800V collector-emitter voltage, 3A continuous collector current, and 1500mW power dissipation. Housed in a TO-220AB package with 3 pins and a tab, offering a 900V collector-base voltage and 7V emitter-base voltage. Minimum DC current gain is 10 at 0.8A and 5V. Silicon material, single element configuration, with a maximum operating temperature of 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Toshiba 2SC3148(Z) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
8.6(Max)
Seated Plane Height (mm)
20.9(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
900V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
800V
Maximum DC Collector Current
3A
Maximum Power Dissipation
1500mW
Material
Si
Minimum DC Current Gain
Category
Bipolar Power
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC3148(Z) Datasheet
Download the complete datasheet for Toshiba 2SC3148(Z) to view detailed technical specifications.
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