2SC3328-Y(T6MURATC

NPN BJT 80V 2A TO-92 Mod Through Hole Transistor

NPN bipolar junction transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 80V and a maximum DC collector current of 2A. This single-element silicon transistor offers a minimum DC current gain of 120 at 0.5A and 2V, with a typical transition frequency of 100MHz. Housed in a 3-pin TO-92 modified plastic header style package suitable for through-hole mounting, with dimensions up to 5.1mm (L) x 4.1mm (W) x 8.2mm (H). Maximum power dissipation is 900mW, operating within a temperature range of -55°C to 150°C.

PackageTO-92 Mod

MountingThrough Hole

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Technical Specifications

Toshiba 2SC3328-Y(T6MURATC technical specifications.

General

Basic Package Type	Through Hole
Package Family Name	TO-92
Package/Case	TO-92 Mod
Package Description	Plastic Header Style Package
Lead Shape	Through Hole
Pin Count	3
PCB	3
Package Length (mm)	5.1(Max)
Package Width (mm)	4.1(Max)
Package Height (mm)	8.2(Max)
Seated Plane Height (mm)	10.4(Max)
Package Weight (g)	0.36
Package Material	Plastic
Mounting	Through Hole
Jedec	TO-92
Type	NPN
Configuration	Single
Number of Elements per Chip	1
Maximum Collector Base Voltage	80V
Maximum Emitter Base Voltage	5V
Maximum Collector-Emitter Voltage	80V
Maximum DC Collector Current	2A
Maximum Power Dissipation	900mW
Material	Si
Minimum DC Current Gain	[email protected]@2V
Maximum Transition Frequency	100(Typ)MHz
Category	Bipolar Power
Min Operating Temperature	-55°C
Max Operating Temperature	150°C

Compliance

Cage Code	S0562
HTS Code	8541210075
Schedule B	8541210080
ECCN	EAR99
Automotive	No
AEC Qualified	No
PPAP	No
Radiation Hardening	No

Datasheet

This datasheet cannot be embedded due to technical restrictions.

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