NPN bipolar junction transistor (BJT) for general-purpose applications. Features 80V collector-emitter voltage and 2A continuous collector current. Single element configuration in a 3-pin TO-92 Mod plastic package with through-hole mounting. Maximum power dissipation is 900mW, with a typical transition frequency of 100MHz. Operating temperature range from -55°C to 150°C.
PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications
Toshiba 2SC3328-Y(T6ND,C) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92 Mod
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
8.2(Max)
Seated Plane Height (mm)
10.4(Max)
Package Weight (g)
0.36
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
80V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
80V
Maximum DC Collector Current
2A
Maximum Power Dissipation
900mW
Material
Si
Minimum DC Current Gain
Maximum Transition Frequency
100(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC3328-Y(T6ND,C) Datasheet
Download the complete datasheet for Toshiba 2SC3328-Y(T6ND,C) to view detailed technical specifications.
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