NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 250V and a maximum DC collector current of 0.05A. This single-element silicon transistor is housed in a 3-pin TO-92 Mod plastic package with through-hole mounting. It offers a minimum DC current gain of 50 at 25mA and 20V, with a typical transition frequency of 100MHz. Maximum power dissipation is 900mW, and it operates up to 150°C.
PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications
Toshiba 2SC3334(C,M) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92 Mod
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
8.2(Max)
Seated Plane Height (mm)
10.4(Max)
Package Weight (g)
0.36
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
250V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
250V
Maximum DC Collector Current
0.05A
Maximum Power Dissipation
900mW
Material
Si
Minimum DC Current Gain
50@25mA@20V
Maximum Transition Frequency
100(Typ)MHz
Category
Bipolar Small Signal
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC3334(C,M) Datasheet
Download the complete datasheet for Toshiba 2SC3334(C,M) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.