NPN RF Bipolar Junction Transistor for surface mount applications. Features a 12V collector-emitter voltage, 0.07A DC collector current, and 150mW power dissipation. This single-element silicon transistor offers a minimum DC current gain of 25 at 20mA/10V and a maximum transition frequency of 5000MHz. Housed in a 3-pin S-Mini package with gull-wing leads, it measures 2.9mm x 1.5mm x 1.1mm and operates from -55°C to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC3429(T85R,FA-2) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
12V
Maximum Collector Base Voltage
17V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.07A
Maximum Power Dissipation
150mW
Minimum DC Current Gain
25@20mA@10V
Minimum DC Current Gain Range
2 to 30
Maximum Transition Frequency
5000(Typ)MHz
Maximum Noise Figure
1.7(Typ)dB
Typical Output Capacitance
0.85pF
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
10V/20mA
Typical Power Gain
16dB
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC3429(T85R,FA-2) Datasheet
Download the complete datasheet for Toshiba 2SC3429(T85R,FA-2) to view detailed technical specifications.
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