NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 80V and a maximum DC collector current of 2A. This single-element transistor offers a maximum power dissipation of 1000mW and a minimum DC current gain of 500 at 400mA and 1V. Housed in a 3-pin TO-252AB (New PW-Mold) package with dimensions of 6.5mm x 5.5mm x 2.3mm.
PackageNew PW-Mold
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba 2SC3474(MATUTU) technical specifications.
General
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 2A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | 500@400mA@1V |
| Maximum Transition Frequency | 85(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SC3474(MATUTU) Datasheet
Download the complete datasheet for Toshiba 2SC3474(MATUTU) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.