NPN bipolar junction transistor (BJT) for general-purpose applications. Features an 80V collector-emitter voltage and 2A maximum collector current. This single-element transistor is housed in a 3-pin MSTM through-hole package with a 2.54mm pin pitch. It offers a minimum DC current gain of 120 at 0.5A and 2V, with a typical transition frequency of 100MHz. Maximum power dissipation is 1000mW, and it operates up to 150°C.
PackageMSTM
MountingThrough Hole
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Technical Specifications
Toshiba 2SC3669-Y(T2PP) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
MSTM
Package/Case
MSTM
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
7.1(Max)
Package Width (mm)
2.7(Max)
Package Height (mm)
4.7(Max)
Seated Plane Height (mm)
4.7(Max) + 1.9
Pin Pitch (mm)
2.54
Package Weight (g)
0.2
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
80V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
80V
Maximum DC Collector Current
2A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
Maximum Transition Frequency
100(Typ)MHz
Category
Bipolar Small Signal
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC3669-Y(T2PP) Datasheet
Download the complete datasheet for Toshiba 2SC3669-Y(T2PP) to view detailed technical specifications.
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