NPN bipolar junction transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 15V and a maximum collector current of 3A. This single-element silicon transistor offers a minimum DC current gain of 800 at 0.5A and 1V, and 300 at 3A and 1V. Housed in a 3-pin TO-92 Mod plastic package with through-hole mounting, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 900mW.
PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications
Toshiba 2SC4682(F) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92 Mod
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
8.2(Max)
Seated Plane Height (mm)
10.4(Max)
Package Weight (g)
0.36
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
15V
Maximum DC Collector Current
3A
Maximum Power Dissipation
900mW
Material
Si
Minimum DC Current Gain
[email protected]@1V|300@3A@1V
Maximum Transition Frequency
150(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC4682(F) Datasheet
Download the complete datasheet for Toshiba 2SC4682(F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.