The 2SC4690-R(F) is a TO-3P(N)IS packaged NPN bipolar junction transistor with a maximum collector-base voltage of 140V and a maximum collector-emitter voltage of 140V. It has a maximum power dissipation of 80W and can operate at temperatures up to 150°C. The transistor is mounted through a hole and has a plastic package with dimensions of 15.8mm in length, 5mm in width, and 21mm in height. It is suitable for use in bipolar power applications.
PackageTO-3P(N)IS
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SC4690-R(F) technical specifications.
General
| Package/Case | TO-3P(N)IS |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.8 |
| Package Width (mm) | 5 |
| Package Height (mm) | 21 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 140V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 140V |
| Maximum DC Collector Current | 10A |
| Maximum Power Dissipation | 80000mW |
| Material | Si |
| Minimum DC Current Gain | 55@1A@5V |
| Maximum Transition Frequency | 30(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SC4690-R(F) Datasheet
Download the complete datasheet for Toshiba 2SC4690-R(F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.