NPN RF BJT transistor for surface mount applications. Features a 12V maximum collector-emitter voltage and 0.08A maximum collector current. This single-element silicon transistor offers a minimum DC current gain of 120 at 10V/20mA and a maximum transition frequency of 7000MHz. Housed in a 3-pin SOT-416 (SSM) plastic package with gull-wing leads, it operates within a temperature range of -55°C to 125°C.
PackageSSM
MountingSurface Mount
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Technical Specifications
Toshiba 2SC5086-Y(T5LMDN,F technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SSM
Package/Case
SSM
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
1.6
Package Width (mm)
0.8
Package Height (mm)
0.7
Seated Plane Height (mm)
0.9(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Jedec
SOT-416
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
12V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.08A
Maximum Power Dissipation
100mW
Minimum DC Current Gain
120@20mA@10V
Minimum DC Current Gain Range
120 to 200
Maximum Transition Frequency
7000(Typ)MHz
Maximum Noise Figure
2dB
Typical Output Capacitance
1pF
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
10V/20mA
Typical Power Gain
16.5dB
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC5086-Y(T5LMDN,F Datasheet
Download the complete datasheet for Toshiba 2SC5086-Y(T5LMDN,F to view detailed technical specifications.
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