NPN RF Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 10V and a maximum collector current of 0.04A. Offers a minimum DC current gain of 80 at 8V/20mA, with a typical transition frequency of 10000MHz and a typical power gain of 13dB. Packaged in a 3-pin S-Mini plastic SMT with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operates within a temperature range of -55°C to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC5089-O(TE85R) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
10V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
1.5V
Maximum DC Collector Current
0.04A
Maximum Power Dissipation
150mW
Minimum DC Current Gain
80@20mA@8V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
10000(Typ)MHz
Maximum Noise Figure
2.5dB
Typical Output Capacitance
0.7pF
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
8V/20mA
Typical Power Gain
13dB
Compliance
Cage Code
S0562
EU RoHS
No
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba 2SC5089-O(TE85R) Datasheet
Download the complete datasheet for Toshiba 2SC5089-O(TE85R) to view detailed technical specifications.
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