NPN RF Bipolar Junction Transistor (BJT) for surface mount applications. Features a 10V maximum collector-emitter voltage and 0.04A maximum DC collector current, with 150mW maximum power dissipation. Offers a minimum DC current gain of 80 at 20mA/8V, a typical transition frequency of 10000MHz, and a maximum noise figure of 3 dB. Housed in a 4-pin SMQ plastic small outline package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm.
PackageSMQ
MountingSurface Mount
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Technical Specifications
Toshiba 2SC5092-O(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SMQ
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
4
PCB
4
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
2.1(Max)
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single Dual Emitter
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
10V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
1.5V
Maximum DC Collector Current
0.04A
Maximum Power Dissipation
150mW
Minimum DC Current Gain
80@20mA@8V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
10000(Typ)MHz
Maximum Noise Figure
3dB
Typical Output Capacitance
0.7pF
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
8V/20mA
Typical Power Gain
9.5dB
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC5092-O(TE85L,F) Datasheet
Download the complete datasheet for Toshiba 2SC5092-O(TE85L,F) to view detailed technical specifications.
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