NPN RF Bipolar Junction Transistor (BJT) for surface mount applications. Features a 10V maximum collector-emitter voltage and 0.04A maximum DC collector current. Offers 150mW maximum power dissipation and a minimum DC current gain of 50 at 8V/20mA. Achieves a typical transition frequency of 10000MHz and a maximum noise figure of 3dB. Housed in a 4-pin SMQ plastic small outline package with gull-wing leads.
PackageSMQ
MountingSurface Mount
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Technical Specifications
Toshiba 2SC5092-R(TE85L,F) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SMQ |
| Package Description | Plastic Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 1.1 |
| Seated Plane Height (mm) | 2.1(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Material | Si |
| Type | NPN |
| Configuration | Single Dual Emitter |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 10V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 1.5V |
| Maximum DC Collector Current | 0.04A |
| Maximum Power Dissipation | 150mW |
| Minimum DC Current Gain | 50@20mA@8V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 10000(Typ)MHz |
| Maximum Noise Figure | 3dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 8V/20mA |
| Typical Power Gain | 9.5dB |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SC5092-R(TE85L,F) Datasheet
Download the complete datasheet for Toshiba 2SC5092-R(TE85L,F) to view detailed technical specifications.
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