NPN bipolar junction transistor (BJT) for power applications, featuring a 600V collector-emitter voltage and 10A continuous collector current. This single-element silicon transistor is housed in a TO-3P(HIS) package with through-hole mounting, offering a maximum power dissipation of 50000mW. Key electrical characteristics include a maximum collector-base voltage of 1500V and a minimum DC current gain of 10 at 1A/5V. The device operates up to a maximum temperature of 150°C.
PackageTO-3P(HIS)
MountingThrough Hole
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Technical Specifications
Toshiba 2SC5129(LBNHE) technical specifications.
General
| Package/Case | TO-3P(HIS) |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 16.5 |
| Seated Plane Height (mm) | 29 |
| Package Weight (g) | 5.5 |
| Mounting | Through Hole |
| Jedec | SC-65 |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 1500V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum DC Collector Current | 10A |
| Maximum Power Dissipation | 50000mW |
| Material | Si |
| Minimum DC Current Gain | 10@1A@5V|4@6A@5V |
| Maximum Transition Frequency | 1.7(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SC5129(LBNHE) Datasheet
Download the complete datasheet for Toshiba 2SC5129(LBNHE) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.