NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 600V collector-emitter voltage and 10A continuous collector current. Maximum power dissipation is 50000mW. Housed in a TO-3P(HIS) package with 3 pins and a tab, this single-element silicon transistor operates up to 150°C.
PackageTO-3P(HIS)
MountingThrough Hole
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Technical Specifications
Toshiba 2SC5129(LITEC,F,M) technical specifications.
General
Package/Case
TO-3P(HIS)
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.5
Package Width (mm)
5.5
Package Height (mm)
16.5
Seated Plane Height (mm)
29
Package Weight (g)
5.5
Mounting
Through Hole
Jedec
SC-65
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
1500V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
600V
Maximum DC Collector Current
10A
Maximum Power Dissipation
50000mW
Material
Si
Minimum DC Current Gain
10@1A@5V|4@6A@5V
Maximum Transition Frequency
1.7(Typ)MHz
Category
Bipolar Power
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC5129(LITEC,F,M) Datasheet
Download the complete datasheet for Toshiba 2SC5129(LITEC,F,M) to view detailed technical specifications.
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