NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-3P(HIS) package. Features a maximum collector-emitter voltage of 700V and a maximum collector current of 10A. Offers a maximum power dissipation of 50000mW and a minimum DC current gain of 10 at 1A/5V. Operates within a temperature range of -55°C to 150°C.
PackageTO-3P(HIS)
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SC5150(LITEC) technical specifications.
General
Package/Case
TO-3P(HIS)
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.5
Package Width (mm)
5.5
Package Height (mm)
16.5
Seated Plane Height (mm)
29
Package Weight (g)
5.5
Mounting
Through Hole
Jedec
SC-65
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
1700V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
700V
Maximum DC Collector Current
10A
Maximum Power Dissipation
50000mW
Material
Si
Minimum DC Current Gain
10@1A@5V|4@6A@5V
Maximum Transition Frequency
2(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC5150(LITEC) Datasheet
Download the complete datasheet for Toshiba 2SC5150(LITEC) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.