NPN bipolar junction power transistor featuring a 230V collector-emitter breakdown voltage and a 15A maximum collector current. This through-hole mounted component offers a 150W power dissipation and a transition frequency of 30MHz. Operating across a temperature range of -55°C to 150°C, it includes a minimum hFE of 80.
Frequency30MHz
Current Rating15A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Toshiba 2SC5200-O technical specifications.
General
Collector Base Voltage (VCBO)
230V
Collector Emitter Breakdown Voltage
230V
Collector Emitter Voltage (VCEO)
230V
Collector-emitter Voltage-Max
3V
Current Rating
15A
Emitter Base Voltage (VEBO)
5V
Frequency
30MHz
Gain Bandwidth Product
30MHz
hFE Min
80
Lead Free
Contains Lead
Max Collector Current
15A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Elements
1
Package Quantity
100
Packaging
Bulk
Polarity
NPN
Power Dissipation
150W
Radiation Hardening
No
RoHS Compliant
No
Transition Frequency
30MHz
DC Rated Voltage
230V
Compliance
RoHS
Not CompliantNo
Datasheet
Toshiba 2SC5200-O Datasheet
Download the complete datasheet for Toshiba 2SC5200-O to view detailed technical specifications.
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