NPN bipolar junction power transistor featuring a 230V collector-emitter breakdown voltage and a 15A maximum collector current. This through-hole mounted component operates within a temperature range of -55°C to 150°C and offers a maximum power dissipation of 130W. With a transition frequency of 30MHz and a minimum hFE of 80, it is suitable for general-purpose power applications. The transistor is housed in a TO-3 package.
Frequency30MHz
PackageTO-3
Current Rating15A
MountingThrough Hole
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Technical Specifications
Toshiba 2SC5242-O technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 230V |
| Collector Emitter Breakdown Voltage | 230V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 230V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 80 |
| Lead Free | Contains Lead |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 130W |
| RoHS Compliant | No |
| Series | 2SC5242 |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 230V |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba 2SC5242-O Datasheet
Download the complete datasheet for Toshiba 2SC5242-O to view detailed technical specifications.
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