The Toshiba 2SC5242-O(ONK) is a single NPN transistor packaged in a TO-3PN outline with a 3-pin configuration. It features a maximum collector-base voltage of 230V, a maximum collector-emitter voltage of 230V, and a maximum DC collector current of 15A. The transistor has a maximum power dissipation of 130mW and operates within a temperature range of -55°C to 150°C. It is constructed from silicon material and has a minimum DC current gain of 80 at 1A and 5V.
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| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.5 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 20 |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 230V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 230V |
| Maximum DC Collector Current | 15A |
| Maximum Power Dissipation | 130000mW |
| Material | Si |
| Minimum DC Current Gain | 80@1A@5V |
| Maximum Transition Frequency | 30(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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