NPN Bipolar Junction Transistor (BJT) for power applications. Features a maximum collector-emitter voltage of 400V and a maximum collector current of 5A. This single-element transistor is housed in a 3-pin plastic SIP package with through-hole mounting. Maximum power dissipation is 1800mW, with a maximum operating temperature of 150°C.
PackageSIP
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SC5266A(TPPP) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 13.4 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 600V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 400V |
| Maximum DC Collector Current | 5A |
| Maximum Power Dissipation | 1800mW |
| Material | Si |
| Minimum DC Current Gain | 13@1mA@5V|[email protected]@5V |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SC5266A(TPPP) Datasheet
Download the complete datasheet for Toshiba 2SC5266A(TPPP) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.