NPN RF Bipolar Junction Transistor for surface mount applications. Features a 5V maximum collector-emitter voltage and 0.02A maximum DC collector current, with 100mW maximum power dissipation. This single-element transistor is housed in a 3-pin TESM package (SC-89) with a 0.5mm pin pitch, measuring 1.4mm x 0.8mm x 0.59mm. Key specifications include a minimum DC current gain of 50 at 3V/15mA, a maximum transition frequency of 9MHz, and a typical noise figure of 2.2dB.
PackageTESM
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba 2SC5317FT(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TESM
Package/Case
TESM
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
1.4
Package Width (mm)
0.8
Package Height (mm)
0.59
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Jedec
SC-89
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
5V
Maximum Collector Base Voltage
8V
Maximum Emitter Base Voltage
1.5V
Maximum DC Collector Current
0.02A
Maximum Power Dissipation
100mW
Minimum DC Current Gain
50@15mA@3V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
9(Min)MHz
Maximum Noise Figure
2.2dB
Typical Output Capacitance
0.7pF
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
3V/15mA
Typical Power Gain
15dB
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC5317FT(TE85L,F) Datasheet
Download the complete datasheet for Toshiba 2SC5317FT(TE85L,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.