
NPN RF Bipolar Junction Transistor for surface mount applications. Features a 5V maximum collector-emitter voltage and 0.02A maximum DC collector current, with 100mW maximum power dissipation. This single-element transistor is housed in a 3-pin TESM package (SC-89) with a 0.5mm pin pitch, measuring 1.4mm x 0.8mm x 0.59mm. Key specifications include a minimum DC current gain of 50 at 3V/15mA, a maximum transition frequency of 9MHz, and a typical noise figure of 2.2dB.
Toshiba 2SC5317FT(TE85L,F) technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TESM |
| Package/Case | TESM |
| Lead Shape | Flat |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 1.4 |
| Package Width (mm) | 0.8 |
| Package Height (mm) | 0.59 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | SC-89 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 5V |
| Maximum Collector Base Voltage | 8V |
| Maximum Emitter Base Voltage | 1.5V |
| Maximum DC Collector Current | 0.02A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 50@15mA@3V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 9(Min)MHz |
| Maximum Noise Figure | 2.2dB |
| Typical Output Capacitance | 0.7pF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 3V/15mA |
| Typical Power Gain | 15dB |
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Toshiba 2SC5317FT(TE85L,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.