NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-3P(HIS) package. Features a 600V collector-emitter voltage, 14A continuous collector current, and 1500V collector-base voltage. Maximum power dissipation is 60000mW with a maximum operating temperature of 150°C. Minimum DC current gain is 10 at 2A/5V and 4 at 11A/5V.
PackageTO-3P(HIS)
MountingThrough Hole
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Technical Specifications
Toshiba 2SC5411(LITEC) technical specifications.
General
Package/Case
TO-3P(HIS)
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.5
Package Width (mm)
5.5
Package Height (mm)
16.5
Seated Plane Height (mm)
29
Package Weight (g)
5.5
Mounting
Through Hole
Jedec
SC-65
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
1500V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
600V
Maximum DC Collector Current
14A
Maximum Power Dissipation
60000mW
Material
Si
Minimum DC Current Gain
10@2A@5V|4@11A@5V
Maximum Transition Frequency
2(Typ)MHz
Category
Bipolar Power
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC5411(LITEC) Datasheet
Download the complete datasheet for Toshiba 2SC5411(LITEC) to view detailed technical specifications.
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