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Technical Specifications
Toshiba 2SC5460(LBSAN-EM) technical specifications.
General
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 800V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 800V |
| Maximum DC Collector Current | 0.05A |
| Maximum Power Dissipation | 1500mW |
| Material | Si |
| Minimum DC Current Gain | 15@7mA@5V |
| Maximum Transition Frequency | 5.5(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SC5460(LBSAN-EM) Datasheet
Download the complete datasheet for Toshiba 2SC5460(LBSAN-EM) to view detailed technical specifications.
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