NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 400V collector-emitter voltage and 2A continuous collector current. This single-element silicon transistor is housed in a TO-252AB (New PW-Mold) package with 3 pins (2+Tab) for surface mounting. Maximum power dissipation is 1000mW, with a minimum DC current gain of 20 at 1mA/5V. Operating temperature range is -55°C to 150°C.
PackageNew PW-Mold
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba 2SC5548A(LBS2RYUS) technical specifications.
General
Package/Case
New PW-Mold
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
5.5
Package Height (mm)
2.3
Seated Plane Height (mm)
2.4
Package Weight (g)
0.36
Mounting
Surface Mount
Jedec
TO-252AB
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
600V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
400V
Maximum DC Collector Current
2A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
20@1mA@5V|[email protected]@5V
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC5548A(LBS2RYUS) Datasheet
Download the complete datasheet for Toshiba 2SC5548A(LBS2RYUS) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.