NPN bipolar junction transistor (BJT) for power applications, featuring a 750V collector-emitter voltage and 17A continuous collector current. This single-element silicon transistor offers a maximum power dissipation of 75000mW and a high transition frequency of 2MHz. Housed in a TO-3P(HIS) package with through-hole mounting, it includes 3 pins and a tab for enhanced thermal management. Operating across a wide temperature range from -55°C to 150°C, it provides a minimum DC current gain of 22 at 2A/5V.
PackageTO-3P(HIS)
MountingThrough Hole
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Technical Specifications
Toshiba 2SC5587(LBMBSNG) technical specifications.
General
Package/Case
TO-3P(HIS)
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.5
Package Width (mm)
5.5
Package Height (mm)
16.5
Seated Plane Height (mm)
29
Package Weight (g)
5.5
Mounting
Through Hole
Jedec
SC-65
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
1500V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
750V
Maximum DC Collector Current
17A
Maximum Power Dissipation
75000mW
Material
Si
Minimum DC Current Gain
22@2A@5V|9@7A@5V|5@14A@5V
Maximum Transition Frequency
2(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC5587(LBMBSNG) Datasheet
Download the complete datasheet for Toshiba 2SC5587(LBMBSNG) to view detailed technical specifications.
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