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TOSHIBA

2SD1140(NILES)

Datasheet
NPN BJT Transistor, 30V, 1.5A, 900mW, TO-92
Toshiba

2SD1140(NILES)

NPN BJT Transistor, 30V, 1.5A, 900mW, TO-92

  1. Semiconductors
  2. Discrete Semiconductors
  1. Semiconductors
  2. Discrete Semiconductors
  3. Transistors
  4. Bipolar Junction Transistors (BJT)

NPN Darlington transistor for through-hole mounting in a TO-92 Mod package. Features a maximum collector-emitter voltage of 30V, 1.5A continuous DC collector current, and 900mW power dissipation. Offers a high DC current gain of 4000 at 150mA/2V. Operates across a temperature range of -55°C to 150°C.

PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications

Toshiba 2SD1140(NILES) technical specifications.

General

Basic Package TypeThrough Hole
Package Family NameTO-92
Package/CaseTO-92 Mod
Package DescriptionPlastic Header Style Package
Lead ShapeThrough Hole
Pin Count3
PCB3
Package Length (mm)5.1(Max)
Package Width (mm)4.1(Max)
Package Height (mm)8.2(Max)
Seated Plane Height (mm)10.4(Max)
Package Weight (g)0.36
Package MaterialPlastic
MountingThrough Hole
JedecTO-92
TypeNPN
ConfigurationSingle
Number of Elements per Chip1
Maximum Collector-Emitter Voltage30V
Maximum Collector Base Voltage30V
Maximum Emitter Base Voltage10V
Maximum Continuous DC Collector Current1.5A
Maximum Power Dissipation900mW
Maximum Base Emitter Saturation Voltage2.2@1mA@1AV
Maximum Collector-Emitter Saturation Voltage1.5@1mA@1AV
Minimum DC Current Gain4000@150mA@2V
Min Operating Temperature-55°C
Max Operating Temperature150°C

Compliance

Cage CodeS0562
Schedule B8541210080
ECCNEAR99
AutomotiveNo
AEC QualifiedNo
PPAPNo
Radiation HardeningNo

Datasheet

Toshiba 2SD1140(NILES) Datasheet

Download the complete datasheet for Toshiba 2SD1140(NILES) to view detailed technical specifications.

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