NPN Darlington bipolar junction transistor (BJT) for through-hole mounting. Features a 30V collector-emitter voltage, 1.5A continuous collector current, and 900mW power dissipation. Packaged in a TO-92 Mod plastic header style with 3 pins. Operates from -55°C to 150°C.
PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications
Toshiba 2SD1140(T6TOY,C) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92 Mod
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
8.2(Max)
Seated Plane Height (mm)
10.4(Max)
Package Weight (g)
0.36
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
30V
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
10V
Maximum Continuous DC Collector Current
1.5A
Maximum Power Dissipation
900mW
Maximum Base Emitter Saturation Voltage
2.2@1mA@1AV
Maximum Collector-Emitter Saturation Voltage
1.5@1mA@1AV
Minimum DC Current Gain
4000@150mA@2V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SD1140(T6TOY,C) Datasheet
Download the complete datasheet for Toshiba 2SD1140(T6TOY,C) to view detailed technical specifications.
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