NPN bipolar junction transistor (BJT) for through-hole mounting. Features a 60V collector-emitter voltage and 3A continuous collector current. This single-element silicon transistor is housed in a 3-pin PW-Mold package with a tab, measuring 6.5mm x 5.5mm x 2.3mm. Maximum power dissipation is 1000mW, with a minimum DC current gain of 60 at 0.5A and 5V. Operating temperature range is -55°C to 150°C.
PackagePW-Mold
MountingThrough Hole
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Technical Specifications
Toshiba 2SD1221-O(Q) technical specifications.
General
| Package/Case | PW-Mold |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Weight (g) | 0.36 |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@5V |
| Maximum Transition Frequency | 3(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SD1221-O(Q) Datasheet
Download the complete datasheet for Toshiba 2SD1221-O(Q) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.