The 2SD1221-Y(Q) is a surface mount bipolar junction transistor from Toshiba with a collector-emitter breakdown voltage of 60V and a maximum collector current of 3A. It is packaged in a TO-252-3 case and is lead free. The transistor has a maximum power dissipation of 1W and a transition frequency of 3MHz. It is available in bulk packaging with 200 units per package.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Toshiba 2SD1221-Y(Q) technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 1V |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 200 |
| Packaging | Bulk |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SD1221-Y(Q) Datasheet
Download the complete datasheet for Toshiba 2SD1221-Y(Q) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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