
NPN Darlington transistor for through-hole mounting, featuring a 3-pin MSTM package with a 2.54mm pin pitch. This single-element transistor offers a maximum collector-emitter voltage of 30V and a continuous DC collector current of 1.5A, with a power dissipation of 1000mW. Key specifications include a minimum DC current gain of 4000 at 150mA and operating temperatures ranging from -55°C to 150°C.
Toshiba 2SD1631(F) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | MSTM |
| Package/Case | MSTM |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 7.1(Max) |
| Package Width (mm) | 2.7(Max) |
| Package Height (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 4.7(Max) + 1.9 |
| Pin Pitch (mm) | 2.54 |
| Package Weight (g) | 0.2 |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum Collector Base Voltage | 30V |
| Maximum Emitter Base Voltage | 10V |
| Maximum Continuous DC Collector Current | 1.5A |
| Maximum Power Dissipation | 1000mW |
| Maximum Base Emitter Saturation Voltage | 2.2@1mA@1AV |
| Maximum Collector-Emitter Saturation Voltage | 1.5@1mA@1AV |
| Minimum DC Current Gain | 4000@150mA |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Toshiba 2SD1631(F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.