NPN Darlington transistor featuring a 30V collector-emitter voltage and 1.5A continuous DC collector current. This single-element transistor offers a maximum power dissipation of 1000mW and a high DC current gain of 4000 at 150mA. Packaged in a 3-pin MSTM through-hole configuration with a 2.54mm pin pitch, it operates within a temperature range of -55°C to 150°C.
PackageMSTM
MountingThrough Hole
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Technical Specifications
Toshiba 2SD1631(T2CLARION) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
MSTM
Package/Case
MSTM
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
7.1(Max)
Package Width (mm)
2.7(Max)
Package Height (mm)
4.7(Max)
Seated Plane Height (mm)
4.7(Max) + 1.9
Pin Pitch (mm)
2.54
Package Weight (g)
0.2
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
30V
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
10V
Maximum Continuous DC Collector Current
1.5A
Maximum Power Dissipation
1000mW
Maximum Base Emitter Saturation Voltage
2.2@1mA@1AV
Maximum Collector-Emitter Saturation Voltage
1.5@1mA@1AV
Minimum DC Current Gain
4000@150mA
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SD1631(T2CLARION) Datasheet
Download the complete datasheet for Toshiba 2SD1631(T2CLARION) to view detailed technical specifications.
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