NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-220NIS package. Features a 60V collector-emitter voltage, 3A continuous collector current, and 2000mW power dissipation. Silicon construction with a minimum DC current gain of 100 at 0.5A and 5V. Maximum operating temperature of 150°C.
PackageTO-220NIS
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SD2012(MURATA2) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 2000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@5V|20@5A@5V |
| Maximum Transition Frequency | 3(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SD2012(MURATA2) Datasheet
Download the complete datasheet for Toshiba 2SD2012(MURATA2) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.