NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 60V collector-emitter voltage, 3A continuous collector current, and 2000mW power dissipation. Housed in a TO-220NIS package with 3 pins and a tab, offering a 2.54mm pin pitch. Silicon material with a minimum DC current gain of 100 at 0.5A/5V. Maximum operating temperature of 150°C.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SD2012(SHARP,M) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220NIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
15 + 5.6(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
60V
Maximum DC Collector Current
3A
Maximum Power Dissipation
2000mW
Material
Si
Minimum DC Current Gain
[email protected]@5V|20@5A@5V
Maximum Transition Frequency
3(Typ)MHz
Category
Bipolar Power
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SD2012(SHARP,M) Datasheet
Download the complete datasheet for Toshiba 2SD2012(SHARP,M) to view detailed technical specifications.
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