The 2SD2526(TP) is a single NPN bipolar junction transistor from Toshiba, packaged in a single in-line package (SIP) for through hole mounting. It has a maximum collector-emitter voltage of 100V and a maximum continuous DC collector current of 5A. The device has a minimum DC current gain of 1000 at a collector current of 5000mA. The transistor is made of plastic and has a package length of 10mm, width of 4.5mm, and height of 13.4mm.
PackageSIP
MountingThrough Hole
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Technical Specifications
Toshiba 2SD2526(TP) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 13.4 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 100V |
| Maximum Continuous DC Collector Current | 5A |
| Minimum DC Current Gain | 1000@5000mA |
Compliance
| Cage Code | S0562 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SD2526(TP) Datasheet
Download the complete datasheet for Toshiba 2SD2526(TP) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.