NPN Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-220AB package. Features a maximum collector-emitter voltage of 80V and a continuous DC collector current of 4A, with a maximum power dissipation of 30000mW. Offers a minimum DC current gain of 1000 at 3A/2V and 2000 at 1A/2V. Operates up to 150°C with a 3-pin configuration and tab.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Toshiba 2SD686(LB,STA2ND1) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 8.6(Max) |
| Seated Plane Height (mm) | 15.3(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Continuous DC Collector Current | 4A |
| Maximum Power Dissipation | 30000mW |
| Maximum Base Emitter Saturation Voltage | 2@6mA@3AV |
| Maximum Collector-Emitter Saturation Voltage | 1.5@6mA@3AV |
| Minimum DC Current Gain | 1000@3A@2V|2000@1A@2V |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SD686(LB,STA2ND1) Datasheet
Download the complete datasheet for Toshiba 2SD686(LB,STA2ND1) to view detailed technical specifications.
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