P-channel silicon MOSFET for small signal applications, featuring a 60V drain-source voltage and 0.2A continuous drain current. This single enhancement-mode transistor is housed in a 3-pin S-Mini surface-mount package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Key electrical characteristics include a ±20V gate-source voltage, 3.5V gate threshold voltage, and 2000 mOhm maximum drain-source resistance. Operating across a wide temperature range of -55°C to 150°C, it offers 73pF typical input capacitance and 48pF typical output capacitance.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SJ168(T5LMDNSI) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | S-MINI |
| Package/Case | S-Mini |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 1.1 |
| Seated Plane Height (mm) | 1.15 |
| Pin Pitch (mm) | 0.95 |
| Package Weight (g) | 0.012 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.2A |
| Material | Si |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 2000@10VmOhm |
| Typical Input Capacitance @ Vds | 73@10VpF |
| Maximum Power Dissipation | 200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 48pF |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 2SJ168(T5LMDNSI) Datasheet
Download the complete datasheet for Toshiba 2SJ168(T5LMDNSI) to view detailed technical specifications.
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