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Technical Specifications
Toshiba 2SJ312(Q) technical specifications.
General
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
14A
Material
Si
Maximum Drain Source Resistance
120@10VmOhm
Typical Gate Charge @ Vgs
45@10VnC
Typical Gate Charge @ 10V
45nC
Typical Input Capacitance @ Vds
1200@10VpF
Maximum Power Dissipation
40000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SJ312(Q) Datasheet
Download the complete datasheet for Toshiba 2SJ312(Q) to view detailed technical specifications.
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