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Technical Specifications
Toshiba 2SJ312(TE24L) technical specifications.
General
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
14A
Material
Si
Maximum Drain Source Resistance
120@10VmOhm
Typical Gate Charge @ Vgs
45@10VnC
Typical Gate Charge @ 10V
45nC
Typical Input Capacitance @ Vds
1200@10VpF
Maximum Power Dissipation
40000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SJ312(TE24L) Datasheet
Download the complete datasheet for Toshiba 2SJ312(TE24L) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.