
P-channel enhancement mode silicon power MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 30A. Features a low on-resistance of 38mΩ at 10V, typical gate charge of 110nC, and input capacitance of 3300pF. Housed in a 3-pin TO-220NIS through-hole package with a pin pitch of 2.54mm, offering a maximum power dissipation of 45W. Operates within a temperature range of -55°C to 150°C.
Toshiba 2SJ334(LBS2TOYOG) technical specifications.
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