P-channel Silicon MOSFET, enhancement mode, single element. Features 20V drain-source voltage, 0.05A continuous drain current, and -7V gate-source voltage. Surface mountable in a 3-pin S-Mini package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Maximum power dissipation is 200mW, with an operating temperature range of -55°C to 150°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SJ345(TE85R,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
-7V
Maximum Continuous Drain Current
0.05A
Material
Si
Maximum Drain Source Resistance
Typical Input Capacitance @ Vds
10.4@3VpF
Maximum Power Dissipation
200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SJ345(TE85R,F) Datasheet
Download the complete datasheet for Toshiba 2SJ345(TE85R,F) to view detailed technical specifications.
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