P-channel enhancement mode silicon MOSFET, designed for surface mount applications. Features a 20V drain-source voltage and 0.05A continuous drain current. Housed in a 3-pin USM (SOT-323) package with dimensions of 2mm x 1.25mm x 0.9mm. Offers a maximum power dissipation of 100mW and operates within a temperature range of -55°C to 150°C.
PackageUSM
MountingSurface Mount
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Technical Specifications
Toshiba 2SJ346(TE85R,F) technical specifications.
General
Package Family Name
USM
Package/Case
USM
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Mounting
Surface Mount
Jedec
SOT-323
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
-7V
Maximum Continuous Drain Current
0.05A
Material
Si
Maximum Drain Source Resistance
Typical Input Capacitance @ Vds
10.4@3VpF
Maximum Power Dissipation
100mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SJ346(TE85R,F) Datasheet
Download the complete datasheet for Toshiba 2SJ346(TE85R,F) to view detailed technical specifications.
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