P-channel enhancement mode silicon power MOSFET featuring a 60V drain-source voltage and 20A continuous drain current. This through-hole mounted transistor, housed in a TO-220NIS package, offers a low drain-source on-resistance of 45mΩ at 10V. Key specifications include a typical gate charge of 90nC at 10V and an input capacitance of 2800pF at 10V. Maximum power dissipation is rated at 45W, with an operating temperature range from -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SJ349(PP,F) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220NIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
15 + 5.6(Max)
Package Weight (g)
1.7
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
20A
Material
Si
Maximum Drain Source Resistance
45@10VmOhm
Typical Gate Charge @ Vgs
90@10VnC
Typical Gate Charge @ 10V
90nC
Typical Input Capacitance @ Vds
2800@10VpF
Maximum Power Dissipation
45000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SJ349(PP,F) Datasheet
Download the complete datasheet for Toshiba 2SJ349(PP,F) to view detailed technical specifications.
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