P-channel enhancement mode silicon power MOSFET, surface mountable in a 4-pin (3+Tab) PW-Mini SOT package. Features a maximum drain-source voltage of 60V, continuous drain current of 1A, and a maximum power dissipation of 1500mW. Operating temperature range from -55°C to 150°C.
PackagePW-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SJ360(T2LIBM) technical specifications.
General
Package Family Name
SOT
Package/Case
PW-Mini
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
4.6(Max)
Package Width (mm)
2.5
Package Height (mm)
1.6(Max)
Seated Plane Height (mm)
1.6(Max)
Package Weight (g)
0.05
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
1A
Material
Si
Maximum Drain Source Resistance
730@10VmOhm
Typical Gate Charge @ Vgs
6.5@10VnC
Typical Gate Charge @ 10V
6.5nC
Typical Input Capacitance @ Vds
155@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SJ360(T2LIBM) Datasheet
Download the complete datasheet for Toshiba 2SJ360(T2LIBM) to view detailed technical specifications.
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