P-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 5A continuous drain current. This single-element silicon transistor utilizes L2-pi-MOS V process technology and is housed in a 3-pin (2+Tab) New PW-Mold surface-mount package measuring 6.5mm x 5.5mm x 2.3mm. Key electrical characteristics include a ±20V gate-source voltage, 2V gate threshold voltage, and 190mOhm maximum drain-source resistance at 10V. Maximum power dissipation is 20W, with an operating temperature range of -55°C to 150°C.
PackageNew PW-Mold
MountingSurface Mount
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Technical Specifications
Toshiba 2SJ377(T6L1HINOJ,N technical specifications.
General
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | L2-pi-MOS V |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 190@10VmOhm |
| Typical Gate Charge @ Vgs | 22@10VnC |
| Typical Gate Charge @ 10V | 22nC |
| Typical Input Capacitance @ Vds | 630@10VpF |
| Maximum Power Dissipation | 20000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SJ377(T6L1HINOJ,N Datasheet
Download the complete datasheet for Toshiba 2SJ377(T6L1HINOJ,N to view detailed technical specifications.
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