P-channel enhancement mode silicon power MOSFET featuring a 100V drain-source voltage and 12A continuous drain current. This single-element transistor is housed in a TO-220NIS package with 3 through-hole pins and a tab, offering a maximum power dissipation of 35000mW. Key electrical characteristics include a maximum gate-source voltage of ±20V and a low drain-source on-resistance of 210mΩ at 10V. Operating temperature range spans from -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SJ380(PP,F) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220NIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
15 + 5.6(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
12A
Material
Si
Maximum Drain Source Resistance
210@10VmOhm
Typical Gate Charge @ Vgs
48@10VnC
Typical Gate Charge @ 10V
48nC
Typical Input Capacitance @ Vds
1100@10VpF
Maximum Power Dissipation
35000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SJ380(PP,F) Datasheet
Download the complete datasheet for Toshiba 2SJ380(PP,F) to view detailed technical specifications.
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