The Toshiba 2SJ407(F) is a P-channel MOSFET with a TO-220-3 package and a maximum power dissipation of 30W. It has a continuous drain current of 5A and a drain to source breakdown voltage of -200V. The device is mounted through a hole and is RoHS compliant. The Toshiba 2SJ407(F) operates within a reasonable temperature range, but specific details are not provided.
PackageTO-220-3
MountingThrough Hole
PolarityP-CHANNEL
Power30W
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Technical Specifications
Toshiba 2SJ407(F) technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 800pF |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 30W |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SJ407(F) Datasheet
Download the complete datasheet for Toshiba 2SJ407(F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.